1992    
1993    
1994    
1995    
1996    
1997    
1998    
1999    
2000    
2001    
2002    
2003    
2004    
2005    
2006    
2007    
2008    
2009    
2010    
2011    
2012    
2013    
2014    
2015    
2016    
Ma, X.-D., Bazhanov, D. I., Fruchart, O., Yildiz, F., Yokoyama, T., Przybylski, M., Stepanyuk, V. S., Hergert, W., Kirschner, J.

Strain relief guided growth of atomic nanowires in a Cu3N-Cu(110) molecular network
Physical Review Letters 102, (20),pp 205503/1-4 (2009)
A self-corrugated Cu3N-Cu(110) molecular network shows the potential to overcome the element dependence barrier as demonstrated by epitaxial growth of atomic nanowires ( ∼ 1 nm in width) among various 3d, 4d, and 5d elements. Scanning tunneling microscopy shows that all of the investigated atomic nanowires share an identical structure, featuring uniform width, height, orientation and the same minimum separation distance. Ab initio study reveals that the formation mechanism of atomic nanowires can be directly attributed to a strain relief guided asymmetric occupation of atoms on the originally symmetric crest zone of the corrugated network.

TH-2009-12