Theory Department
Max Planck Institute of Microstructure Physics
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Tao, K., Stepanyuk, V. S., Rungger, I., Sanvito, S.

Tailoring magnetoresistance at the atomic level: An ab initio study
Physical Review B 85, (04),pp 045406/1-6 (2012)
The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage.

TH-2012-02