Lorite, C., Zandalazini, C., Esquinazi, P., Spemann, D., Friedländer, S., Pöppl, A., Michalsky, T., Grundmann, M., Vogt, J., Meijer, J., Heluani, S. P., Ohldag, H., Adeagbo, W. A., Nayak, S. K., Hergert, W., Ernst, A., Hoffmann, M.
Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires
Journal of Physics: Condensed Matter 27, (25),pp 256002/1-6 (2015)
The magneto-transport properties of single proton-implanted ZnO and of Li(7ZnO microwires have been studied. The as-grown microwires were highly insulating and
not magnetic. After proton implantation the Li(7behavior of the negative magneto-resistance (MR) at temperature above 150 K.
This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO.
The observed difference in the transport properties of the wires is related to the amount of
stable Zn vacancies created at the near surface region by the proton implantation and Li
doping. The magnetic field dependence of the resistance might be explained by the formation
of a magnetic/non-magnetic heterostructure in the wire after proton implantation.
TH-2015-13