For antiferromagnetically coupled Fe/Cr multilayers the low-field contribution to the resistivity p_DW, which is caused by the domain walls, is strongly enhanced at low temperatures. The low-temperature resistivity p_DW varies according to a power law, p_DW(T)=p_DW(0)-A*T^α with the exponent α ≅ 0.7-1. This behavior cannot be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the non-uniform gauge fields caused by the domain walls.