Theory Department
Max Planck Institute of Microstructure Physics
1997    
1998    
1999    
2000    
2001    
2002    
2003    
2004    
2005    
2006    
2007    
2008    
2009    
2010    
2011    
2012    
2013    
2014    
2015    
2016    
2017    
2018    
2019    
2020    
2021    
Dugaev, V. K., Berakdar, J., Barnas, J.

Resonant transmission through a double domain wall in magnetic nanowires
Materials Science & Engineering B 126, (2-3),pp 254-257 (2006)
As experimentally verfied, a large magnetoresistance due to domain walls creation (or destruction) in Ni nanowires and in some nanostructures based on GaMnAs magnetic semiconductors. Hence the presence and structuring of magnetic domain walls have important potential applications in magnetoelectronics devices. Here, we uncover a way of controlling the conductance via resonant transmission through a double domain wall structure. This phenomenon is due to quantum interference of charge carrier wave functions in spin quantum wells, which leads to the formation of quantized energy states in the potential well created by a double domain wall. When the energy of a state in the spin quantum well is resonant with the Fermi energy in the wire, the spin-flip transmission through the domain walls becomes most effective. This gives rise to a resonance-type dependence of the conductance on the distance between the domain walls or on the Fermi energy.

TH-2006-04