Roy, S., Meyerheim, H. L., Ernst, A., Mohseni, K., Tusche, C., Vergniory, M. G., Menshchikova, T. V., Otrokov, M. M., Ryabishchenkova, A. G., Aliev, Z. S., Babanly, M. B., Kokh, K. A., Tereshchenko, O. E., Chulkov, E. V., Schneider, J., Kirschner, J.
Tuning the Dirac point position in Bi2Se3(0001) via surface carbon doping
Physical Review Letters 113, (11),pp 116802/1-5 (2014)
Angular resolved photoemission spectroscopy in combination with ab initio calculations show that trace
amounts of carbon doping of the Bi2Se3 surface allows the controlled shift of the Dirac point within the
bulk band gap. In contrast to expectation, no Rashba-split two-dimensional electron gas states appear. This
unique electronic modification is related to surface structural modification characterized by an expansion of
the top Se-Bi spacing of ≈ 11 % as evidenced by surface x-ray diffraction. Our results provide new ways to tune the surface band structure of topological insulators.
TH-2014-35