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Teichert, Ch., Lagally, M. G., Peticolas, L. J., Bean, J. C., Tersoff, J.

Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
Physical Review B 53, (24),pp 16334-16337 (1996)
In the growth of Si1−xGex films on Si(001), the growth front undergoes a series of elastic stress relief mechanisms. We use these mechanisms in the molecular-beam-epitaxy growth of SiGe/Si superlattices to create relatively periodic surface and interface patterns of small coherent 105-faceted SiGe crystallites. The self-organization of these islands is affected in different ways by tuning substrate miscut, alloy composition, and layer thickness.

ki-1996-s03