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Enders, A., Monchesky, T., Myrtle, K., Urban, R., Heinrich, B., Kirschner, J., Zhang, X.-G., Butler, W. H.

The role of interfaces in the magnetoresistance of Au/Fe/Au/Fe/GaAs(001)
Journal of Applied Physics 89, (11),pp 7110-7112 American Institute of Physics, (2001)
The electron transport and magnetoresistance (MR) were investigated in high quality crystalline epitaxial Fe(001) and Au(001) films and exchange coupled Au/Fe/Au/Fe/GaAs(001) trilayer structures. Fits to the experimental data were based on the semiclassical Boltzmann equation, which incorporates the electronic properties obtained from first-principles local density functional calculations. The fits require a surprisingly high asymmetry for the spin dependent electron lifetimes in Fe, t / t = 10 at room temperature. Despite the large atomic terraces at the Au/vacuum and Fe/GaAs interfaces the scattering at the outer interfaces was found to be diffuse. The origin of MR in Au/Fe/Au/Fe/GaAs(001) structures is due to electron channeling in the Au spacer layer. The measured MR is consistent with the diffusivity parameters s= 0.55, s= 0.77 at the metal-metal interfaces.

ki-2001-t02